Synthesis of Pt nanoparticles and their burrowing into Si due to synergistic effects of ion beam energy losses

• Pravin Kumar,
• Udai Bhan Singh,
• Kedar Mal,
• Sunil Ojha,
• Indra Sulania,
• Dinakar Kanjilal,
• Dinesh Singh and
• Vidya Nand Singh

Beilstein J. Nanotechnol. 2014, 5, 1864–1872, doi:10.3762/bjnano.5.197

• islands [20][28]. However, other effects such as ion-induced viscous flow, recoil implantation and thermodynamically driven capillary forces can also contribute to the formation of the buried NPs. When the ion beams with high electronic energy loss (dominates at high energies) pass through the material, a

• each incident ion. The distribution shows that Pt atoms undergo near-surface recoil implantation upon ion irradiation. By observation of the uniform size of the Pt NPs (up to 240 nm beneath the surface), the density distribution of NPs (density decreases from surface to bulk), and the recoil

• decreases drastically. The XRD analysis shows an absence of silicide phase within the detection limit of the instrument. Ion beam induced sputtering followed by partial dewetting of metallic films and recoil implantation seems to be the possible mechanism behind Pt NP (≈5 nm) formation. The ion-induced

Synthesis of embedded Au nanostructures by ion irradiation: influence of ion induced viscous flow and sputtering

• Udai B. Singh,
• D. C. Agarwal,
• S. A. Khan,
• S. Mohapatra,
• H. Amekura,
• D. P. Datta,
• Ajay Kumar,
• R. K. Choudhury,
• T. K. Chan,
• Thomas Osipowicz and
• D. K. Avasthi

Beilstein J. Nanotechnol. 2014, 5, 105–110, doi:10.3762/bjnano.5.10

• Au nanoparticles into the glass substrate. Keywords: embedded nanoparticles; ion beam irradiation; recoil implantation; Introduction Noble-metal nanoparticles (NPs) are of great interest due to their large surface-to-volume ratio and their enhanced absorption of visible light. The shape- and size

• as ion energy, ion dose, dose rate, and substrate temperature. One of the biggest drawbacks for this procedure is the requirement of a specific ion source to generate ion beams of the desired element. Recoil implantation overcomes this difficulty and is an alternative way to introduce foreign atoms

• ] have shown that recoil implantation is a useful process to introduce impurities from a thin film of metal into a thin near-surface layer of the substrate. Recoil implantation has also been studied in detail in thin films [18][19]. The ion beam induced sputtering during the irradiation of thin films